PTW20N50

Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTW9N90

Features
■ RDS(on) (Max 1.4 Ω )@VGS=10V
■ Gate Charge (Typical 47nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTU50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTU7N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N65

650V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU6N60

600V N-Channe MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=600V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU5N65

650V N-Channel MOSFET

Features
●Low Intrin sic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTU2N80

HIGH VOLTAGE N-Channel MOSFET
600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP9540

P-Channel Enhancement Mode Power MOSFET
Description
The PTP9540 uses advanced trench technology and designto provide excellent RDS(ON) with low gate charge. It can beused in a wide variety of applications.

General Features
● VDS =-100V,ID =-30ARDS(ON) <58mΩ @ VGS=-10V (Typ:50mΩ)
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance

Application
● Portable equipment and battery powered systems

PTP8580

Description
The PTP8580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

General Features
● VDS =85V,ID =80ARDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP7190

Description
The PTP7190 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS = 71V,ID =90ARDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTP1579

Description
The PTP1579 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =79ARDS(ON) < 19mΩ @ VGS=10V (Typ:16mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTP1550

Description
The PTP1550 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =150V,ID =50A
RDS(ON) <23mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
●Power switching application
●Hard switched and High frequency circuits
●Uninterruptible power supply

PTF50M06

Features
? 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
? Low gate charge ( typical 33nC)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.

PTP8N60

Features
■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V
■ Gate charge (Typical 30nC)
■ High ruggedness
■ Fast switching
■ 100% AvalancheTested
■ Improved dv/dt capability

General Description
This Power MOSFET is produced using PHILOP’s advance dplanar stripe,DMOS technology. This latest technology has beenespecially designed to minimize on-state resistance, have a highrugged avalanche characteristics. These devices are well suitedfor high efficiency switch mode power supplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology

PTP5N65-E

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.7Ω (Max) @VG=10V
●100% Avalanche Tested

PTP2N80

800V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :Qg= 13nC (Typ.)
●BVDSS=800V,ID=3A
●RDS(on) : 5 Ω (Max) @VG=10V
●100% Avalanche Tested

PTP01H11

Description
The PTP01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications

General Features
● VDS =100V,ID =110ARDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTP01H10

Description
The PTP01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features

● VDS = 100V,ID =100ARDS(ON) < 11mΩ @ VGS=10V (Typ:9.9mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTF12N60

Features
■ RDS(on) (Max 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 50nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

PTF10N65

Features
■ RDS(on) (Typical 0.70 Ω )@VGS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)

General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.

PTF10N60

Features
10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
Low gate charge ( typical 48nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability

PTF8N60

Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge(Typical 28nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTF5N60

Features
■4.5A,600v,RDS(on)=2.5Ω@VGS=10V
■ Gate charge (Typical 17nC)
■ High ruggedness
■Fast switching
■100% AvalancheTested
■Improved dv/dt capability

General Description

This Power MOSFET is producedusingPHILOP’s advancedplanar stripe, DMOS technology.This latest technology has beenespecially designed to minimizeon-state resistance, have a highrugged avalanche characteristics, suchas fastswitching time,lowon resistance.low gate charge and especially excellentavalanchecharacteristics.Thispower MOS ET is usually usedatF ACadaptors, on the batterychargerand SMPS

PTF3N80

Features
■ RDS(on) (Max 5.0 Ω )@VGS=10V
■ Gate Charge(Typical 15.0nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range(150°C)

PTD7580

Description
The PTD7580 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
● VDS = 75V,ID =80ARDS(ON) <8mΩ @ VGS=10V(Typ︰6.5mΩ)
● Special process technology for high ESD capability
● Special designed for convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply

PTD630

200V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 22 nC (Typ.)
●BVDSS=200V,ID=9A
●Lower RDS(on) : 0.4 Ω (Max) @VG=10V
●100% Avalanche Tested

PTD50N03

60A , 25 V N-Channel MOSFET
Features
●RDS(ON) = 5.2mΩ @VGS = 10 V
●Low capacitance
●Optimized gate charge
●Fast switching capability
●Avalanche energy specified

PTD30P55

DescriptionThe PTD30P55 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-30ARDS(ON) <40mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

Application
●Power switching application
●Hard switched and high frequency circuits
●Uninterruptible power supply

PTD7N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V,ID=6A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD6N60

600V N-Channel MOSFET
Features
● Low Intrinsic Capacitances
● Excellent Switching Characteristics
● Extended Safe Operating Area
● Unrivalled Gate Charge : 16 nC (Typ.)
● BVDSS=600V,ID=6A
● Lower RDS(on) : 1.5Ω (Max) @VG=10V
● 100% Avalanche Tested

PTD5N65

650V N-Channel MOSFET
Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 15 nC (Typ.)
●BVDSS=650V,ID=4.5A
●Lower RDS(on) : 2.5Ω (Max) @VG=10V
●100% Avalanche Tested

PTD5N50

N-Channel MOSFET
Features
■ RDS(on) (Max 1.5Ω) @ VGS=10V
■ GateCharge(Typical 20nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■MaximumJunctionTemperatureRange(150°C)

PTD2N80

HIGH VOLTAGE N-Channel MOSFET600V N-Channel MOSFET

Features
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge :12 nC (Typ.)
●BVDSS=800V,ID=2A
●Lower RDS(on) : 6.3 Ω (Max) @VG=10V
●100% Avalanche Tested

PTR1N60

N-CHANNEL 600V - 8 W - 1A DPAK / IPAK / TO-92Power MOSFET
●TYPICAL RDS(on) = 8 W
●EXTREMELY HIGH dv/dt CAPABILITY
● 100% AVALANCHE TESTED
●GATE CHARGE MINIMIZED
●NEW HIGH VOLTAGE BENCHMARK

APPLICATIONS
●SWITCH MODE LOW POWER SUPPLIES(SMPS)
●LOW POWER, LOW COST CFL (COMPACTFLUORESCENT LAMPS)
● LOW POWER BATTERY CHARGERS

PT401

环亚AG描述
PT401是一款用于替代反激變換器中副邊肖特基二極管的高性能同步整流控制器。
PT401基于“自適應死區時間控制”技術,可支持連續模式(CCM)、斷續模式(DCM)和準諧振工作模式(QR)。同時內部集成參考電壓為1.25V的誤差放大器,可替代外部TL431,降低了系統成本。
PT401集成欠壓保護功能與原副邊共通保護功能。

主要特點
●反激拓撲副邊同步整流控制器
●支持CCM、DCM和準諧振工作模式
●<300uA超低靜態電流
●內置1.25V(±1.5%)參考電壓和誤差放大器,無需TL431
●集成多種保護
  ■VCC欠壓保護(UVLO)
  ■原副邊共通保護
●封裝類型SOT23-6

典型應用
●工業電源系統
●電池供電系統
●反激適配器

PT35XX

概述
PT35XX是一款用于開關電源的高效率同步整流控制IC。其具備較高的集成度,在有效的提升開關電源的轉換效率的同時,減少了外圍元器件的應用。
PT35XX可用于DCM/QR開關電源系統。該電路內置45V的功率管,在系統中替代次級肖特基管,並提高整個系統的工作效率。具有開啟閥值電壓低、開關速度快和反向恢復時間短的特點。
PT35XX具有極低的靜態工作損耗和自供電技術。電路采用SOP8的標準封裝形式。

特點
支持DCM和QR模式
● 內部集成低內阻的N溝道功率MOSFET
●開關轉換速度快、反向恢復時間短
●特有的自供電技術,無需外部電源供電
●內置多重保護
●外圍應用器件少
● 靜態功耗小

特點
●支持DCM和QR模式
● 內部集成低內阻的N溝道功率MOSFET
●開關轉換速度快、反向恢復時間短
●特有的自供電技術,無需外部電源供電
● 內置多重保護
●外圍應用器件少
●靜態功耗小

應用
●電源適配器、電源轉換器等
●小型數碼环亚AG的輔助電源等

PT5222

概述
PT5222為USB鎳鎘/鎳氫充電管理IC,現在主要應用的市場為電子玩具USB充電器。本芯片為一種高效率、控制穩定可靠的充電管理電路。整個電路通過檢測電池電壓控制充電電流大小。電路采用-△V快速充電終止方式,保證電池的充飽率達到100%。芯片內置了高精度的 ADC,實時對電池電壓和充電電流進行準確采樣,並經過智能算法處理,從而高效、可靠的完成充電。

特性
●給鎳鎘/鎳氫電池3、4節電池充電。
●芯片的工作電壓為5V,供電範圍為3.5V~7.5V。
●芯片設計了內置的10bit ADC可對采樣的電池電壓和電流進行模數轉換,並輸出數字信號到算術邏輯單元檢測。
●充電截止方式采用-△V檢測方式。
●IC內置自動電流調節器,當升壓電壓升到最大或輸入電壓被拉低時具
有電流自動調節功能,電流自動調節功能會將電流調至一個最大電流。
●IC內部可以檢測USB供電電壓大。 SB電源電壓被拉低到某個閾值時會減小充電電流以保護USB電源的安全,USB電源電壓升起後再增大充電電流。
●IC具有上電輸出短路報警功能,以保證電池、及IC自身安全。
●IC內部具有過溫保護功能,當芯片內部溫度過高時會關閉輸出,溫度滯回後繼續工作。
●驅動 LED 輸出顯示充電狀態。
●采用ESOP8封裝。

PT5121

概述
PT5121為USB鎳鎘/鎳氫充電管理IC,現在主要應用的市場為電子玩
具USB充電器。
本芯片為一種高效率、控制穩定可靠的充電管理電路。整個電路通過檢測電
池電壓控制充電電流大小。電路具有0△V 和-△V 快速充電終止方式,保證電
池的充飽率達到100%。芯片設計了一種內置的高精度ADC 可對采樣的電池電壓
和電流進行模數轉換,並輸出數字信號到算術邏輯單元檢測,從而可靠地終止快
速充電。

特性
●給鎳鎘/鎳氫電池1 節-8 節可充電電池充電。
●芯片的工作電壓為5V,供電範圍為2.6V~7.5V。
●芯片設計了內置的10bit ADC 可對采樣的電池電壓和電流進行模數轉換,並
輸出數字信號到算術邏輯單元檢測。
● 充電截止方式采用0△V+ -△V 檢測方式。
●IC 內置自動電流調節器,當升壓電壓升到最大或輸入電壓被拉低時具
有電流自動調節功能,電流自動調節功能會將電流調至一個最大電流。
●IC 內部可以檢測USB 供電電壓大。 SB 電源電壓被拉低到某個閾值時
會減小充電電流以保護USB 電源的安全,USB 電源電壓升起後再增大充電
電流。
●IC 具有上電輸出短路報警功能,以保證電池、及IC 自身安全。
●IC 內部具有過溫保護功能,當芯片內部溫度過高時會關閉輸出,溫度滯回後
繼續工作。
● 驅動LED 輸出顯示充電狀態。
●采用SOP8 封裝。

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